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7 surface at 300 K by using synchrotron radiation XPS, LEED and STMYoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
no abstracts in English
Harries, J.; Tode, Mayumi; Sumimoto, Yuichi; Inoue, Keisuke; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Using the high energy resolution surface chemistry apparatus at SPring-8's BL23SU it is possible to record angular and chemical-state resolved X-ray photoelectron spectra. Chemical-state specific depth profile information can be obtained from these spectra using the maximum entropy method. Here we describe progress made in the combination of these two techniques, with the specific example of the depth-profiling of various nitridation states present in a Al(111) sample nitrided using a supersonic molecular beam.
/Si interface during oxidation of Si
C
alloy layer on Si(001) surfacesHozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
The oxidation of SiC surface was studied by real-time X-ray photoelectron spectroscopy using synchrotron radiation to clarify the correlation between oxidation-induced strain and oxidation kinetics. Firstly, a p-type Si(001) surface was carbonized by CH
. Then, the surface was oxidized at 773 K under 5.010
Pa of O. After saturation, the O pressure was increased to 1.310
Pa. Si-2p, O-1s, and C-1s photoelectron spectra were measured alternately during oxidation. From the time evolution of C-1s/Si-2p(Si
) ratio, it was found that the Si composes of bulk and strained Si atoms. The increase of C-1s/Si-2p(Si) ratio suggests the concentration of carbon at the interface. After O increase, the interface oxidation proceeds. The rate and the oxidation-induced strain decreased with oxidation. We concluded the interface oxidation rate is enhanced by oxidation-induced strain.